توضیحات
Data Sheet
Specifications
| MZ-7GE240EW | MZ-7GE480EW | MZ-7GE960EW | ||
|---|---|---|---|---|
| General Features | Application | Server and data center | ||
| Capacity* | ۲۴۰GB (1GB=1 Billionbyte by IDEMA) | ۴۸۰GB (1GB=1 Billionbyte by IDEMA) | ۹۶۰GB (1GB=1 Billionbyte by IDEMA) | |
| Form factor | ۲٫۵ inch Form Factor | |||
| Interface | SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface | |||
| Dimensions (L x W x H) | ۱۰۰ X 69.85 X 6.8 (mm) Dimension | |||
| Weight | Max 65.0g Weight | |||
| Storage Memory | Samsung 19nm Toggle 3bit MLC NAND | |||
| Controller | Samsung 3-core MDX Controller | |||
| Cache Memory | Samsung 256 MB Low Power DDR2 SDRAM | Samsung 512 MB Low Power DDR2 SDRAM | Samsung 1GB Low Power DDR2 SDRAM | |
| Special Feature | TRIM Support | Yes | ||
| S.M.A.R.T Support | Yes | |||
| GC (Garbage Collection) | Auto Garbage Collection Algorithm | |||
| WWN Support | World Wide Name supported | |||
| Performance** | Sequential Read | Up to 530 MB/sec | ||
| Sequential Write | Up to 270 MB/sec | Up to 410 MB/sec | Up to 410 MB/sec | |
| Random Read (4KB, QD32) | Up to 87,000 IOPS | |||
| Random Write (4KB, QD32) | Up to 12,000 IOPS | Up to 14,000 IOPS | Up to 14,000 IOPS | |
| Random Read (4KB, QD1) | Up to 8,000 IOPS | |||
| Random Write (4KB, QD1) | Up to 12,000 IOPS | Up to 14,000 IOPS | Up to 14,000 IOPS | |
| Quality of Service (QoS) | ۹۹٫۹% (Read / Write) : 0.6ms / 7ms ۹۹٫۹۹۹۹% (Read / Write) : 3ms / 8ms(4KB, QD32) |
|||
| Latency | Sequential (Read/Write) : 55us / 45us Random (Read/Write) : 115us / 55us |
|||
| Environment | Average Power Consumption (system level)*** | Average (Read/Write): 3.1 Watts / 3.1 Watt Maximum (Burst Read/Write) : 3.1Watts / 3.4 Watt |
Average (Read/Write): 3.1 Watts / 4.1 Watt Maximum (Burst Read/Write) : 3.1Watts / 4.4 Watt |
Average (Read/Write): 3.1 Watts / 4.2 Watt Maximum (Burst Read/Write) : 3.1Watts / 4.8 Watt |
| Power consumption (Idle)*** | ۱٫۵ Watts | |||
| Allowable Voltage | ۵V ± ۵% | ۵V ± ۵% | ۵V ± ۵% | |
| Reliability (MTBF) | ۲ Million Hours Reliability (MTBF) | |||
| Operating Temperature | ۰ – ۷۰ ℃ Operating Temperature | |||
| Shock | ۱,۵۰۰G & 0.5ms (Half sine) | |||
| Installation Kit | Not Available | |||
| Management Software | Samsung SSD Magician DC Software for SSD management | |||
| Warranty | ۵ Years Limited WarrantyMore Information >> | |||
Data centers must operate efficiently, delivering constant, exceptional performance with low latency to keep up with demand. It’s critical that data centers maintain high stability because of the various read and write workloads and their need to continually operate 24/7. Exposure to data corruption, or deletion caused by unforeseen power outages, also are of high concern.
As a leader in memory technology, Samsung has the expertise to offer data centers superior solid state drives (SSDs) that provide exceptional performance and high reliability, even in the unfortunate event of a power loss. Engineered specifically for data centers, Samsung’s SSD 845DC EVO uses carefully selected NAND chips, optimized controller and dependable power-loss protection architecture to keep your data center operating at high performance 24/7, 365 days a year.
Outstanding performance for high-demand data centers
Deliver consistent performance with low latency
A data center SSD must deliver performance consistency to satisfy Quality of Service (QoS) requirements. The QoS is measured by the percentage of response times that fall below a given value, characterized by the consistency of the steady performance the device delivers. This is of particular importance in cloud data center environments. Low latency rates are also vitally important, which is the length of time between the memory’s receipt of a read request and its release of data corresponding to the request,
The 845DC EVO has a low latency rate for non-mixed, 100 percent random reads or writes, which translates into improved QoS. For sequential reads and writes, the 845DC EVO also shows impressive QoS results, as well as for mixed workloads.
Maintain a high-level of sustained performance using the best-quality components
To meet the critical demands of the data center environment, an SSD must maintain sustained performance over extended periods of time. The Samsung SSD 845DC EVO was specifically developed to address these unique challenges and optimized to excel in virtually any data center scenario, performing best when it matters the most.
Using a memory, and Samsung’s data center optimized MEX controller, the 845DC EVO delivers high sustained random read/write and sequential read/write performance for diverse RAID configurations. The NAND chips used in the 845DC EVO are selected from the highest-quality wafers, tuned for high endurance and then tested at the component and system level before they are approved for use in the SSD. The 845DC EVO also boasts low power consumption and high cost-effectiveness.
Ensure high mixed workload
performance
The I/O workloads generated in data centers involve a combination of various read/write mix ratios, request sizes and Native Command Queuing (NCQ) queue depths (QDs), depending on the type of service. The 845DC EVO is especially designed to answer the diverse needs of data center applications by not limiting itself to simply improving basic read/write performances. It also provides outstanding performance for the various mixed workloads that access a server simultaneously. For various read/write ratios, the 845DC EVO presents overall superior performances, which contributes greatly to a data center’s total performance.
Rest easy with data protection you can depend on
Advanced ECC engine and end-to-end data protection
Detect signal discrepancies and proactively remedy them in real time. This feature significantly improves the reliability of the SSD, by extending error detection through the entire path, from host interface to the NAND flash memory, in the SSD. There are specific algorithms that monitor and tune each cell for higher endurance, while wear leveling and block replacements are proactively managed by monitoring the endurance level of the NAND.
Power loss protection
Preserve data integrity due to unexpected power loss with Samsung’s advanced power-loss protection architecture. By using the electricity from a tantalum capacitor, enough time can be provided to transfer the cached data in the DRAM to the flash memory, helping to prevent data loss.
S.M.A.R.T.
Proactively monitor the computer drives to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T.). When a failure is anticipated, the S.M.A.R.T. warns the user of impending drive failure, giving the user time to replace the ailing drive, avoiding data loss or unexpected outages.
Dynamic Thermal Guard protection
Protect the SSD from overheating by controlling the speed of the CPU in relationship to its core temperature by throttling back the performance to prevent thermal shutdown.
Ensure seamless integration with one end-to-end solution
The three most crucial components of any SSD are the NAND flash memory, the controller and the firmware. The NAND flash memory does the critical task of storing your valuable data. And the controller and firmware work together to accomplish the complex and essential job of managing data storage and maintaining the performance and lifespan of the SSD. Seamless integration of each component is crucial in creating a superb-quality SSD.
Samsung is one of the few manufacturers that actually designs all three of these important components in-house. And among those that do design the components themselves, Samsung has vast experience in the SSD market. Because Samsung has intimate knowledge of every SSD component and its parts, it’s well equipped to fine-tune each element at every stage of development to ensure they all work together. The result is an SSD you can completely trust to store your priceless data.
نقد و بررسی ها
هیچ دیدگاهی برای این محصول نوشته نشده است .